In:
ECS Transactions, The Electrochemical Society, Vol. 35, No. 30 ( 2011-10-11), p. 145-154
Kurzfassung:
Ge condensation has been reported to improve the hole mobility of the SiGe-on-insulator (SGOI). Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire exhibits higher sensitivity. In this work, we investigated the effect of different oxidation recipe to provide information on the sensitivity of SiGe nano-wire. The 3-amino-propyltrime-thoxy-silane (APTMS) is used to modify the nano-wire's surface potential. Induced sensitivity characteristics of the samples were preformed to estimate the improvement effect. The mixed N2/O2 oxidation process with optimization ratio can be an effective technology to improve the sensitivity of SGOI nano-wires.
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2011