In:
ECS Transactions, The Electrochemical Society, Vol. 41, No. 3 ( 2011-10-04), p. 469-473
Abstract:
In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO2 film and effectively improve the reliability of the conventional Cu-doped SiO2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (~106), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO2 ReRAM device.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2011