In:
ECS Transactions, The Electrochemical Society, Vol. 37, No. 1 ( 2011-06-24), p. 181-188
Abstract:
By atomic layer formation of B or P on Si1-xGex (100) surface and subsequent Si capping layer deposition, heavy atomic-layer doping is achieved at temperatures below 500 oC. B doping dose of about 7x1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7 x1013 cm-2. The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1-xGex(100) with P atom amount below about 4x1014 cm-2 using Si2H6 instead of SiH4, it is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain ...
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2011
