In:
ECS Transactions, The Electrochemical Society, Vol. 11, No. 6 ( 2007-09-28), p. 91-99
Abstract:
By stripe-shape patterning of the Si/strained Si/ 1-x Ge x /Si(100) heterostructures, the strained Si 1-x Ge x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si 1-x Ge x layer proceeds in the region from the stripe edge to the inner position of 0.4 um away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si 1-x Ge x layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si 1-x Ge x layer.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2007
