In:
ECS Transactions, The Electrochemical Society, Vol. 3, No. 7 ( 2006-10-20), p. 269-274
Abstract:
The fabrication of high speed npn SiGe HBTs requires the use of carbon to inhibit boron diffusion. The incorporation of carbon in SiGe films must be accurately controlled to avoid the formation of C-related defects. This paper describes a method which allows the development of SiGe:C processes for high performance HBTs based on photoluminescence analysis.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006