In:
ECS Transactions, The Electrochemical Society, Vol. 64, No. 8 ( 2014-08-09), p. 55-59
Abstract:
We demonstrate that Ge FETs show significantly high mobility of not only hole but also electron. In particular, this paper discusses what challenging issues are in n-channel FETs to achieve high electron mobility both in high electron density and in very thin EOT regions, by carefully considering electron scattering mechanisms in Ge MOS inversion channel. The results show us a promising future of Ge devices beyond Si FET technology.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/06408.0055ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2014