In:
ECS Transactions, The Electrochemical Society, Vol. 58, No. 8 ( 2013-08-31), p. 119-132
Abstract:
A pin LED was fabricated from the n-Ge/i-Ge/p-Si hetero junction structure grown by using RTCVD. The structural properties of the n-Ge/i-Ge/p-Si hetero junction structure were investigated using high-resolution X-ray diffraction (HRXRD). Specifically, the recent advances in the dry etching of n-Ge/i-Ge/p-Si hetero junction structure have been used to define pin LED n-Ge/i-Ge layer mesas. I-V characteristics of the pin LED indicate a reasonable reverse saturation current of 140 μA at -1V. The roll-off in electroluminescence spectra after wavelength of 1700 nm is expected due to the decreased emission of n-Ge/i-Ge/p-Si pin LED at room temperature.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05808.0119ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013