In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 6S ( 2012-06-01), p. 06FD21-
Abstract:
Low-pressure chemical vapor deposition (LPCVD) is a simple and useful method for the large-area synthesis of graphene films. Here, we have investigated how to adjust and optimize process conditions for the synthesis of single-layer graphene films by LPCVD. Through our experimental procedure, uniform and high-quality graphene films could be grown on Cu foil at 1000 °C for 20 min with an H 2 flow rate of 20 sccm, CH 4 flow rate of 40 sccm, total pressure of 1.7 Torr, and a fast cooling rate ( 〉 10 °C/s). In a Raman spectrum measured from synthesized graphene film, we found that the full width at half-maximum (FWHM) of a symmetric 2D peak centered at 2682.5 cm -1 was 34 cm -1 and the 2D-to-G intensity ratio was 1.35.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.06FD21
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7