In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 4S ( 2012-04-01), p. 04DD09-
Abstract:
We report the first demonstration of a flexible one diode–one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO 2 /Pt diode with a large rectifying ratio and a stable Ni/HfO 2 /Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO 2 diode and the cycling variations, retention, and read disturb immunity of the HfO 2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO 2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.04DD09
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
