In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 7R ( 2011-07-01), p. 075802-
Abstract:
Ti–Si–N and Ti–Al–Si–N films, which possess high hardness due to the formation of a nanocomposite structure in the films, were deposited by reactive magnetron sputtering using alloy targets and then postannealed in air at temperatures ranging from 300 to 800 °C. The hardness of both the films decreased significantly as postannealing temperature increased. However, the hardness of Ti–Al–Si–N films postannealed up to 500 °C remained at more than 30 GPa, which was significantly higher than that of the Ti–Si–N films after the post annealings. Electron probe microanalyses and X-ray photoelectron spectroscopy revealed that Al 2 O 3 phases were formed in the postannealed Ti–Al–Si–N films. Transmission electron microscopy with energy-dispersive X-ray analysis showed that the Al 2 O 3 layer of the postannealed Ti–Al–Si–N films was formed 40 nm below the surface, whereas the depth of the TiO 2 –SiO 2 layer of the postannealed Ti–Si–N films was 100 nm from the surface. These results indicate that Al 2 O 3 phases existed at the surface of the Ti–Al–Si–N films and prevented the oxidation of the interior of the films during postannealing at high temperatures in air.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.075802
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
