In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 3R ( 2011-03-01), p. 031101-
Abstract:
We investigated the effect of indium (In) doping (0.6, 1, 5, and 10 at. %) on the diode characteristics of heterostructures consisting of In-doped ZnO films on p-Si(111) substrates. In-doped ZnO films were deposited by pulsed laser deposition with an In-doped ZnO target, and heterojunction diodes were fabricated by photolithography and a lift-off method. The electrical properties of ZnO films were altered by In doping, with the In (10 at. %)-doped ZnO film having the highest electron concentration (3.0×10 19 cm -3 ) and lowest resistivity (1.5×10 -2 Ω·cm) of the analyzed ZnO films. In doping also had a strong effect on diode characteristics. In particular, In-doped ZnO/p-Si diodes show a very low reverse current density of approximately 2.8×10 -6 A/cm 2 (In 10 at. %) at -5 V and a high on–off ratio (In 10 at. %) of about 2.5×10 -6 at ±5 V. The heterostructure diodes exhibited typical current–voltage characteristics with turn-on voltages in the range 1.2–2.4 V and series resistances in the range 37–99 Ω. The modified diode characteristics may be related to changes in the ZnO film structure induced by In doping. We also discuss the effect on diode characteristics of In doping of ZnO films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.031101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
