In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 10R ( 2005-10-01), p. 7418-
Abstract:
A high-quality thin (1120) GaN layer with an atomically flat surface has been successfully grown on a precisely offset-angle-controlled (1102) sapphire substrate by metal-organic vapor phase epitaxy. The insertion of an AlGaN layer between the underlying AlN layer and the GaN layer was found to improve the crystalline quality of the upper GaN layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.7418
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3