In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 1S ( 2005-01-01), p. 621-
Abstract:
Poly(3-hexylthiophene) field-effect transistors (P3HT-FETs) have been prepared by an electric-field casting method. P3HT was cast onto a substrate with source and drain electrodes in nitrogen atmosphere saturated with CHCl 3 vapor. An electric-field was applied between the electrodes during film formation. Thermal treatment and electric-field application were performed after film formation to control the device parameters. The threshold voltage ( V th ) of P3HT-FETs without electric-field application during film formation was almost invariable after the thermal treatment. On the other hand, the V th of P3HT-FETs formed with electric-field application can be controlled using thermal treatment. The device parameters can also be controlled by a post-electric-field application. These variations are a result of the doping or dedoping of O 2 . Two types of inverter showing different inversion points were fabricated using such controlled P3HT-FETs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
