In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 6B ( 2004-06-01), p. L811-
Kurzfassung:
The epitaxial growth of ZnSe layers on Si substrates utilizing a Ge/Ge 0.95 Si 0.05 /Ge 0.9 Si 0.1 buffer structure is demonstrated. In this study, we examine the structure, optical characteristics and atomic interdiffusion of the ZnSe epilayer grown on Si. In a sample with a 2° off-cut Si substrate, the outdiffusion of Ge into the ZnSe epilayer is suppressed. The low-temperature PL measurements indicate that the sample with a 2° off-cut Si substrate improves its optical characteristic effectively. The X-ray diffraction analysis and transmission electron microscopy (TEM) results indicate that the use of a 2° off-cut Ge/Ge 0.95 Si 0.05 /Ge 0.9 Si 0.1 /Si substrate markedly improves the crystallinity of and reduced the number of threading dislocations in ZnSe grown on Si.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.L811
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2004
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
