In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 9S ( 2004-09-01), p. 6635-
Abstract:
Ru thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using cyclopentadienyl-propylcyclopentadienlylruthenium(II) [RuCp(i-PrCp)] and the nucleation behaviors of Ru films on Ta 2 O 5 , TiN, Si 3 N 4 , SiO 2 , TiO 2 substrates were investigated. It appeared that the difference in nucleation behaviors on various substrates is due to the bonding type between atoms in substrate materials. The nucleation property of Ru films on TiN was successfully improved by plasma treatment of the TiN substrate using Ar before film deposition. It was found that the Ar plasma treatment selectively removes N ions from the surface, makes the TiN surface more metallic or ionic (due to the residual Ti-O bonding), and reduces the nucleation barrier. In addition, the oxidation resistance of Ru/TiN layers was improved by H 2 annealing, which made the Ru films more dense.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.6635
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
