In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 7R ( 2001-07-01), p. 4661-
Abstract:
We investigated whether the Cu(111) single-oriented state having excellent electromigration resistance could be realized on SiO 2 /Si and Si wafers by annealing Cu–Zr alloy films in vacuum. It was revealed that the Cu(111) single-oriented state could be realized on both substrates of SiO 2 /Si and 7059 glass, when Cu–Zr films were annealed at 500°C for 5 min. The obtained resistivities of the Cu–Zr films after annealing above 400°C were lower than those (3–3.5 µΩcm) of Al alloy systems. Next, we examined the thermal stability of the Cu–Zr/ZrN/Zr/Si contact system, and compared it with that of the Cu/ZrN/Zr/Si system. As a result, although the thermal stability of the former was somewhat inferior to that of the latter, the system was sufficiently stable up to 550°C, maintaining the single-oriented state of the Cu(111) overlayer and the ZrSi 2 region with the lowest contact resistivity at the Si interface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.4661
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7