In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7R ( 2000-07-01), p. 4110-
Abstract:
We have investigated the preparation conditions of single-oriented (002) Zr film on n-(001) Si by varying the sputtering parameters during deposition using an ultrahigh-vacuum dc magnetron sputtering system. The crystallinity and preferential orientational plane of Zr film on Si were examined by X-ray diffraction analysis, and the chemical nature at the Zr/Si interface was evaluated by X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses. We found that the Zr film with the single-oriented (002) plane grew on (001) Si under the conditions of sputtering power above 50 W and substrate temperature range of 350–400°C. For this reason, it is speculated that a thin interdiffusion layer, which consists of elementary atoms (Zr and Si) and Zr silicide, formed at the Si interface plays the role of a buffer layer to relax the misfit between Zr and Si.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.4110
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
