In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2S ( 1999-02-01), p. 1094-
Abstract:
We measured temperature dependence of luminescence decay
time of self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of
temperature below ∼40 K and is linear with temperature between ∼40 and ∼120 K. These two features in the two temperature
regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime
is thought to be caused by the disklike shape of the InP dots; the dot lateral widths are longer than their heights, and thus they have
an intermediate character between zero-dimension and two-dimensions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.1094
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
