In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 11R ( 1997-11-01), p. 6722-
Abstract:
Atomic force microscopy (AFM) measurements revealed many striations on the Si trench sidewalls fabricated by reactive ion etching (RIE). The trench sidewall surface was rougher when a resist with a rougher surface was employed as a mask, whereas it was smoother when a resist with a smoother surface was employed. This result strongly suggests that the roughness of the resist is one of the causes of the roughness of the trench sidewalls.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.6722
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7