In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 10R ( 1997-10-01), p. 6500-
Abstract:
Pb(Zr 0.52 Ti 0.48 )O 3 (PZT)/CeO 2 films were grown on Si(111) substrates by the pulsed laser deposition method. Room-temperature (20° C) deposition of the CeO 2 film on a hydrogen-terminated Si surface resulted in a sharp hetero-interface with no amorphous transition layer. PZT films were grown on the CeO 2 layer in {101} orientation with in-plane three directions at substrate temperatures higher than 450° C. An Al/PZT(80 nm)/CeO 2 (24 nm)/Si structure showed a threshold voltage shift as large as 1.6 V (when bias voltage was 3 V) in a capacitance–voltage ( C–V ) curve due to the surface charges induced by ferroelectric polarization of the PZT film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.6500
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7