In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7R ( 1997-07-01), p. 4295-
Abstract:
In this paper, we investigate the growth of In x Ga 1- x N thin films using the hydride vapor phase epitaxy (HVPE) method. Indium is hardly contained in films grown at higher growth temperatures, and phase separation tendencies between InN and GaN are observed in some grown films. In their photoluminescence spectra measured at room temperature, two peaks are observed at 370 nm and 430–440 nm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4295
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
