In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6S ( 1997-06-01), p. 4097-
Abstract:
II–VI semiconductor low-dimensional structures, quantum dots, have been grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE). Before the heteroepitaxial growth, atomically flat, As-stabilized GaAs surfaces were prepared by high-temperature As cleaning using tris-dimethylamino-arsenic (TDMAAs). CdSe thin films deposited on (100)ZnSe/GaAs surfaces have been investigated with atomic force microscopy (AFM) and were found to form three-dimensional islands with rather uniform size distribution. A large mismatch (∼7%) of lattice constants between CdSe and ZnSe pseudomorphically grown on GaAs possibly results in the Stranski-Krastanov growth mode. CdSe quantum dots with a diameter of 97±11 nm were successfully formed at 350°C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4097
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7