In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1574-
Abstract:
n-i-p-n hydrogenated amorphous silicon (a-Si:H) layers were deposited onto porous silicon (PS) formed on p-type crystalline silicon (c-Si) by anodization and used to improve the current injection of a PS-based light-emitting diode (LED). The electroluminescence (EL) spectrum for the obtained PS-based LED with n-i-p-n a-Si:H layers showed the similar tendency as that of a photoluminescence (PL) signal for an as-anodized PS. The current conduction mechanisms of this PS-based LED were also studied.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1574
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3