In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 10A ( 1996-10-01), p. L1241-
Abstract:
We have investigated the growth of microcrystalline silicon films by electron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD) using He as the ECR gas at substrate temperatures in the range of 180 to 550°C with He to silane ratios (He/SiH 4 ) of 1, 4, and 9. With ratios of 4 and 9, the volume fractions of microcrystalline silicon increase with temperature and exceed 90% at 550°C. To study the role of He plasma, we prepared silicon films using a layer-by-layer technique and found that long exposure to He plasma changes the structure of amorphous silicon to microcrystalline.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1241
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7