In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4R ( 1996-04-01), p. 2073-
Abstract:
High-performance Au/Ti/Ge/Pd ohmic contacts on n + -In 0.5 Ga 0.5 P have been fabricated for the first time. Using an n + -In 0.5 Ga 0.5 P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2×10 18 cm -3 , the minimum specific contact resistivity is as low as 1.2×10 -5 Ω·cm 2 , which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In 0.5 Ga 0.5 P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2073
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
