In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 882-
Abstract:
The effect of NH 3 annealing on polysilicon thin-film transistors (poly-Si TFT's) is investigated. Substantial reduction of the off-state leakage current in self-aligned n-channel poly-Si TFT's is achieved upon NH 3 annealing without degradation of on-state characteristics. NH 3 annealing is believed to generate positive fixed charges in the gate oxide near the source and drain junction during NH 3 annealing. These positive fixed oxide charges reduce the electric field in the drain junction, resulting in the reduction of the leakage current. NH 3 annealing can be applied effectively to fabricate high-performance self-aligned poly-Si TFT's.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7