In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 12S ( 1995-12-01), p. 6950-
Abstract:
The self-developing properties of an AlF 3 -doped LiF inorganic resist are studied. Electron-stimulated desorption (ESD) from the resist film is characterized by Auger electron spectroscopy and X-ray photoelectron spectroscopy. A conventional scanning electron microscope is employed for nanometer-scale direct writing and for in situ surface observation. Results show that a metal-rich layer which is formed by rapid and preferential fluorine desorption due to ESD suppresses subsequent fluorine desorption. This indicates that the surface diffusion of this residual metal plays an important role in the self-developing reaction. Nanometer-scale lithography onto the LiF(AlF 3 ) film is achieved using a scanning electron beam.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.6950
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7