In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 5R ( 1995-05-01), p. 2453-
Abstract:
We have investigated the microstructures and electrical properties of Pb 0.95 La 0.05 TiO 3 (PLT) thin films deposited on the (100)-oriented Pt/(100)MgO substrates by rf magnetron sputtering and have fabricated a thin film infrared sensor. The (100)-oriented Pt film is formed via a coalescence of Pt islands and the Pt layer goes through a transition from nonconducting islands to a conductive percolating network as the Pt deposition time increases. The highly c -axis oriented PLT thin film has been successfully grown on the Pt bottom electrode with a network structure. The PLT thin film on the interconnected percolating Pt network exhibits a well saturated ferroelectric hysteresis loop with the remanent polarization of 1.6 µ C/cm 2 and the coercive field of 70 kV/cm. The responsivity and detectivity of the thin film infrared sensor are 700 V/W and 6×10 8 cm√ Hz/W at 10 Hz, respectively, without any poling treatment.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.2453
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7