In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 7R ( 1994-07-01), p. 4053-
Abstract:
The selective homoepitaxy of diamond thin films has been demonstrated using (CO, B 2 H 6 )/H 2 as the gaseous source and an yttria-stabilized zirconia thin-film mask. By making full use of the selective epitaxy technique, selectively grown p-i-p trilayered epitaxial diamond film, where the area of each layer was reduced successively, has been accomplished. From the cathodoluminescence observation, visible luminescence from each of the layers grown on one chip has been investigated. The spectrum of the inner layer of undoped diamond film was different from that of the same layer without the overlying boron-doped layer. The spatial distribution of the luminescence of the selectively grown epilayers was also observed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.4053
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
