In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12R ( 1993-12-01), p. 5796-
Abstract:
Cl radical etching (RE) of GaAs, a previously evaluated dry etching method with very low damage which is suitable for nanometer-scale fabrication, damage removal and surface cleaning, is investigated in comparison with Cl 2 etching. At room temperature, etching conditions with a higher chiorine pressure of about 10 -3 Torr provide no significant etching rate, whereas etching conditions at a lower chlorine pressure of (4±1)×10 -5 Torr provide a moderately slow etching rate (40 Å/min) and precise control of etching depth, both of which are useful for shallow etching of nanometer-scale structures. Effective cleaning of GaAs native oxide and carbon contaminants by the Cl radicals is clearly demonstrated, but this cleaning does not occur when using Cl 2 molecules. When the GaAs surface is not covered with such contaminants, both the Cl-RE and the Cl 2 etching progress. The roughness of the Cl-radical-etched surface is as low as 50 Å after etching to a depth of 2640 Å. After heat treatment of the Cl-radical-etched sample at 400°C, an atomically ordered and stoichiometric GaAs surface is obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.5796
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
