In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 9A ( 1986-09-01), p. L736-
Abstract:
We have studied the Si–Be co-doping effect for the suppression of the compositional disordering of AlGaAs–GaAs superlattices (SLs) by SIMS. The Si–Be co-doping is found to suppress the fast Si diffusion which is ascribed to the formation of (Si III –Si V ) pairs. The possible mechanism is that the formation of (Be III –Si III ) pairs prevents that of (Si III –Si V ) pairs. The suppression of the Si fast diffusion impedes the SL disordering. The threshold concentration of Be required to suppress the SL (300 Å periodicity) disordering is around 2×10 18 cm -3 in the case of 1.5×10 19 cm -3 Si concentration.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.25.L736
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7