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    Online Resource
    The Effect of Temperature on Hot Electron Trapping in MOSFET's
    IOP Publishing ; 1983
    In:  Japanese Journal of Applied Physics Vol. 22, No. 4A ( 1983-04-01), p. L221-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. 4A ( 1983-04-01), p. L221-
    Abstract: The temperature dependence of the threshold voltage shift has been studied for long term device degradations. The threshold voltage shift strongly depends on temperature and this is mainly caused by the temperature dependence of the effective trap density. The model assuming that the traps with an emission probability higher than 10 -5 ∼10 -6 are useless as electron traps agrees well with the experimental results.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.22.L221
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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