In:
Fluctuation and Noise Letters, World Scientific Pub Co Pte Ltd
Abstract:
The elementary jumps in the electron current through conducting filaments of two nanometer-sized virtual memristor structures consisting of a contact of a conductive atomic force microscope probe to the Si 3 N 4 layer with the thickness of 6[Formula: see text]nm deposited onto the [Formula: see text] -Si(001) conductive substrates are investigated. These structures are: (S1) the Si 3 N 4 /Si film; (S2) the Si 3 N 4 /SiO 2 /Si stack, a similar structure with 2[Formula: see text]nm SiO 2 sublayer between the film and the substrate. Usually, such investigations are performed by the analysis of the waveform of this current with the aim of extracting the random telegraph noise (RTN). Here, we develop a new indirect method, which is based on the measurement of the spectrum of the low-frequency flicker noise in the current without extracting the RTN. We propose that the flicker noise is caused by the motion (drift/diffusion) of nitrogen ions via vacancies within and around the filament. The number of these ions is estimated by taking into account the geometrical parameters of the filament. This allows us to estimate the root mean square magnitude [Formula: see text] of the current jumps, which are caused by random jumps of nitrogen ions, and the number M of these ions. This is fundamental for understanding the elementary mechanisms of the electron current flowing through the filament and the resistive switching in memristor devices.
Type of Medium:
Online Resource
ISSN:
0219-4775
,
1793-6780
DOI:
10.1142/S0219477524500147
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2023
