In:
Canadian Journal of Physics, Canadian Science Publishing, Vol. 92, No. 7/8 ( 2014-07), p. 684-689
Abstract:
The influence of Bi doping on the thermal, electrical, and optical properties of Ge 2 Sb 2 Te 5 thin films was investigated. The existence of two Bi concentration ranges with different influence of dopant on the properties of thin films was established. At low concentrations (0.5–1.0 wt.% of Bi), anomalous deviations of physical properties from monotonous concentration dependences were observed. This effect is explained by the use of percolation theory, where formation of infinite clusters is accompanied by critical phenomena at critical concentrations.
Type of Medium:
Online Resource
ISSN:
0008-4204
,
1208-6045
DOI:
10.1139/cjp-2013-0607
Language:
English
Publisher:
Canadian Science Publishing
Publication Date:
2014
detail.hit.zdb_id:
2990-7
detail.hit.zdb_id:
2021497-2