In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 15, No. 2 ( 1997-03-01), p. 477-481
Abstract:
A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vdc, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1997
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
797726-8
