In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 9, No. 2 ( 1991-03-01), p. 492-494
Abstract:
Mechanism of the negative differential resistance (NDR) observed in the scanning tunneling spectroscopy of the Si(111)√3×√3-B surface is discussed based on the simulation with the first-principles electronic states calculation. The NDR is reproduced by the W10[111] tip model, but not by the W14[110] and Pt10[111] models. The presence of the localized dangling bond state near EF for the surface in conjunction with a single tunnel active orbital at the tip apex causes the NDR.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1991
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
