In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 37, No. 2 ( 2019-03-01)
Abstract:
Next generation electronic devices like single electron transistors (SETs) operating at room temperature (RT) demand for high-resolution patterning techniques and simultaneously cost-effective, high-throughput manufacturing. Thereby, field-emission scanning probe lithography (FE-SPL) is a direct writing method providing high-resolution and high-quality nanopatterns. SET devices prepared by FE-SPL and plasma etching at cryogenic substrate temperature were shown to operate at RT [C. Lenk et al., Microelectron. Eng. 192, 77 (2018); Z. Durrani, M. Jones, F. Abualnaja, C. Wang, I. W. Rangelow, M. Kaestner, S. Lenk, C. Lenk, and A. Andreev, J. Appl. Phys. 124, 144502 (2018); I. W. Rangelow et al., J. Vac. Sci. Technol. B 34, 06K202 (2016)]. Nevertheless, FE-SPL lacks in writing speed and large area manufacturing capability required for industrial device manufacturing. This can be overcome by combining FE-SPL with nanoimprint lithography (NIL), which enables the replication of high-resolution features on large areas and provides high throughput. In this work, the authors will review a high-throughput process chain for RT-SET fabrication based on reproducing FE-SPL prepared masters by NIL and etching.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2019
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0