In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 31, No. 5 ( 2013-09-01)
Abstract:
In this study, metamorphic growth of GaAs on Si(001) substrate was investigated via three-step growth in a low-pressure metal organic chemical vapor deposition reactor. Three-step growth was achieved by simply inserting an intermediate temperature GaAs layer between the low temperature GaAs nucleation layer and the high temperature GaAs epilayer. Compared with conventional two-step growth, three-step growth could further reduce surface roughness and etch pit density. By combining three-step growth with thermal-cycle annealing, the authors have grown a 1.8-μm-thick GaAs epilayer with root mean square roughness of only 1.8 and 0.73 nm in 10 × 10 μm2 and 2 × 2 μm2 scanning areas, respectively. The threading dislocation density of the 1.8-μm-thick GaAs epilayer was as low as 1.1 × 107 cm−2, as calculated directly from the double crystal x-ray diffraction ω-scan full width at half maximum of the GaAs diffraction peak. The corresponding etch pit density was only 3 × 106 cm−2.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2013
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
