In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 30, No. 5 ( 2012-09-01)
Abstract:
The formation of Co1−xNixSi2 films was investigated using Co1−xNix layers (1–8 nm thick, 1 ≥ x ≥ 0) sputter-deposited onto Si(100). The critical Co1−xNix thickness below which Co1−xNixSi2 films directly grow is found to be x-dependent; it increases from 1–2 nm for Co and Co0.75Ni0.25 to 4–6 nm for Co0.5Ni0.5, and from 3–4 nm for Ni to 6–8 nm for Co0.25Ni0.75. The Co1−xNixSi2 growth tends to occur at lower temperatures with decreasing t and/or increasing x. Although ultrathin, the Co1−xNixSi2 films can remain morphologically stable at 900 °C. Entropy of mixing coupled with lattice matching is discussed as being responsible for the enhanced Co1−xNixSi2 growth and stability.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2012
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
