In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 28, No. 6 ( 2010-11-01), p. 1231-1234
Abstract:
Ni / Al 2 O 3 / Al film was fabricated for a high performance capacitor using electrochemical etching, anodizing, and electroless-plating. The focus of this study was to form seamless and void-free Ni electrodes on Al2O3/Al with etched tunnels. The conventional deposition method of metal was limited to full-fill for the Al tunnel pits with a high aspect ratio, a depth of about 40 μm, and diameters of about 0.5–1 μm. Nevertheless, Ni filling in tunnel pits was achieved through electroless-plating for the first time, producing a seamless and void-free electrode. The authors used a polyethylene glycol solution bath to block the Pd on top of the tunnel prior to electroless-plating, which enabled the Ni to deposit preferentially at the bottom, leading to a filling from the bottom to the top. Finally, the capacitance density for the etched and Ni electroless plated films was 220 nF/cm2 while that for a film without any etch tunnel was 12.5 nF/cm2.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2010
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
