In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 27, No. 1 ( 2009-01-01), p. 369-372
Abstract:
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors and field effect transistors (FETs) with Al∕BiFeO3∕Y2O3∕Si structure were fabricated. The capacitance-voltage (C-V) characteristics exhibit clockwise hysteresis loop due to the ferroelectric polarization of BiFeO3. The maximum C-V memory window was 0.88V at a sweep voltage range of 5V. Low leakage current density of 7×10−9A∕cm2 was measured at an applied voltage of 5V using MFIS capacitors. The IDS-VDS and IDS-VGS characteristics of MFISFETs were measured. The subthreshold slope was 170mV∕dec and the maximum electron mobility was 155cm2∕Vs.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2009
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
