In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 1 ( 2002-01-01), p. 274-277
Abstract:
Effects of photowashing treatment on electrical properties of GaAs metal–semiconductor field-effect transistors (MESFETs) were investigated using x-ray photoemission spectroscopy. The binding energy of the Ga–As bond shifted toward lower binding energies and the ratio of Ga/As was increased, namely the formation of the Ga-rich surface. This suggests that acceptor-type defects GaAs− were produced by the photowashing treatment and the level for Fermi energy pinning at the surface moved to acceptor states. The Fermi energy pinning caused by GaAs− results in an increase of the depletion layer width at the ungated region of the MESFET via the increase of band bending from the surface. Therefore the drain current density at a positive gate bias and the leakage current at gate-to-drain were simultaneously reduced.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2002
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
