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    Performance of the Raith 150 electron-beam lithography system
    American Vacuum Society ; 2001
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 19, No. 6 ( 2001-11-01), p. 2499-2503
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 19, No. 6 ( 2001-11-01), p. 2499-2503
    Abstract: The performance of a Raith 150 electron-beam lithography system is reported. The system’s resolution, stability, intrafield distortion, stitching, and overlay performance are evaluated. Patterning at low- and high-acceleration voltages is compared. The system was used to pattern sub-20 nm features, and the largest intrafield distortion for a 100 μm field was measured to be 15 nm. Pattern-placement accuracy below 35 nm, mean plus twice the standard deviation, was demonstrated.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1414018
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2001
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 797726-8
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