In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 19, No. 4 ( 2001-07-01), p. 1195-1200
Abstract:
We studied the effects of Ge preamorphization (PAM) and Ti deposition method on 0.25 μm Ti-salicide junctions in comparison with As PAM. For each PAM scheme, ion implantations are performed at 2E14 ion/cm2 dose and 20 keV energy using As75 and GeF4 ion sources. Ionized physical vapor deposition and collimated type dc-magnetron sputtering are used for depositing ∼300 Å Ti for this study. Ge PAM showed lower sheet resistance (∼48 Ω /sq.) and better within-wafer uniformity than As PAM at 0.25 μm line width of n+/p-well junctions. This is attributed to enhanced C54-silicidation at n+ junction. At p+ junctions, comparable performance in sheet-resistance reduction at fines lines for both As and Ge PAM schemes. Junction leakage current (JLC) levels are below ∼1E14 A/μm2 at area patterns for all process conditions, whereas no degradation in JLC are shown under Ge PAM condition even at edge-intensive patterns. Junction breakdown voltage and contact resistances are satisfactory at all process conditions.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2001
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
