In:
Nanotechnology, IOP Publishing, Vol. 34, No. 9 ( 2023-02-26), p. 095201-
Abstract:
Tunnel field-effect transistors (TFETs) have garnered great interest as an option for the replacement of metal–oxide–semiconductor field-effect transistors owing to their extremely low off-current and fast switching suitable for low-power-consumption applications. However, conventional doped TFETs have the disadvantage of introducing undesirable random dopant fluctuation (RDF) events, which cause a large variance in the threshold voltage and ambipolar leakage current at negative gate voltages. In this study, a simple approach for charge plasma-based doping-less TFETs (DL-TFETs), including the Ge/Si bilayer frame, which affects the RDF and low on-current issues, was developed by the commercially available Silvaco Atlas device simulator. The use of the Ge/Si bilayer enhances the on-current and point subthreshold swing to 1.4 × 10 −6 A and 16.6 mV dec −1 , respectively. In addition, the dependencies of the Ge/Si junction boundary position and Ge content were examined systematically to attain a firm understanding of the electrical features in DL-TFETs.
Type of Medium:
Online Resource
ISSN:
0957-4484
,
1361-6528
DOI:
10.1088/1361-6528/aca618
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
1362365-5
SSG:
11
