In:
Applied Physics Letters, AIP Publishing, Vol. 117, No. 26 ( 2020-12-28)
Kurzfassung:
A room-temperature method to determine the trap energy levels in the carbon-doped (Al)GaN buffers is developed via a transient current measurement on the AlGaN/GaN high electron mobility transistors under back-gate voltages combined with a measurement of the buffer vertical leakage. Under high back-gate voltages, a linear relationship is obtained between the trap energy levels and the square roots of electric field strength, suggesting that the vertical conduction in the C-doped buffer follows the Poole–Frenkel law. The trap energy level in C-doped Al0.07Ga0.93N is finally determined to be 1.1 eV through the established room-temperature approach, while that in C-doped GaN is extracted to be 0.9 eV, both of which are related to the carbon impurities.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2020
ZDB Id:
211245-0
ZDB Id:
1469436-0