In:
Journal of Applied Physics, AIP Publishing, Vol. 128, No. 23 ( 2020-12-21)
Abstract:
The generation of p-type GaN through ion implantation is an attractive proposition in the massive production of GaN-based bipolar devices, whereas the removal of implantation induced lattice disturbances and defects is a difficult exercise and hampers the conversion of conductivity in GaN. Pulsed laser annealing is an effective annealing technique to recover lattice crystallinity and activate dopants with the preserved implanted profile. In this work, the effect of pulsed laser annealing on structural and optical recovery in high-dose magnesium (Mg) ion-implanted GaN has been investigated. The structural evolution and vibrational dynamics indicate an obvious structural recovery and partial strain release of Mg-implanted GaN during the pulsed laser annealing process, with a threshold laser fluence of 400 mJ/cm2, while rough surface structures are a result of the regrowth mechanism similar to liquid phase epitaxy. The enhanced donor–acceptor transition at 3.35 eV after pulsed laser irradiation is a sign of the effective activation of Mg from interstitial sites into the substitution of Ga ions. These results suggest that further optimization of the laser annealing technique has promising potential to manipulate the p-type conductivity of Mg-implanted GaN and to be implemented in GaN bipolar devices for practical applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2020
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
