In:
Applied Physics Letters, AIP Publishing, Vol. 117, No. 13 ( 2020-09-28)
Abstract:
In this Letter, we present direct current (DC), small signal radio frequency (RF), and large signals with pulsed and continuous wave (CW) studies and characterization on oxygen annealed (OA) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with significantly improved CW output power density (Pout) when compared to other β-Ga2O3 RF devices. The OA process is found to be useful in compensating and neutralizing the donors in the unintentionally doped (UID) buffer layer and, hence, suppressing a second depletion effect in this UID layer. The device demonstrates a peak DC drain current of 200 mA/mm, a transconductance of 11 mS/mm, and an on/off ratio of 109. Small-signal RF characterization indicates a cut-off frequency and maximum oscillation frequency (fT/fmax) of 1.8 GHz and 4.2 GHz, respectively. The device also shows an output power (Pout)/peak power added efficiency (PAE)/gain of 0.4 W/mm/10%/3.2 dB and 0.43 W/mm/12%/3.6 dB for CW and pulsed signals, respectively, at an operation frequency of 1 GHz.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2020
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0