In:
AIP Advances, AIP Publishing, Vol. 6, No. 4 ( 2016-04-01)
Abstract:
The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113] ) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.
Type of Medium:
Online Resource
ISSN:
2158-3226
Language:
English
Publisher:
AIP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2583909-3