In:
Applied Physics Letters, AIP Publishing, Vol. 104, No. 17 ( 2014-04-28)
Abstract:
The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1 eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3 eV, i.e., below the bulk band gap. These results indicate that the GaN(1–100) surface band gap is smaller than the bulk one due to the existence of intra-gap states, in agreement with density functional theory calculations. Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2014
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0